Vorlesung
2 SemesterwochenstundenBTU-Vorlesungsverzeichnis ↗- Freitag09 Okt 2026 bis 29 Jan 202713:45 bis 15:15
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15015Fakultät 1 – MINT – Mathematik, Informatik, Physik, Elektro- und Informationstechnik
Grenzflächen-Engineering und 2D-Halbleiter für die Post-Moore Nanoelektronik
Titel auf Englisch: Interfacial Engineering and 2D Semiconductors for Post Moore Nanoelectronics
Lernergebnisse
Upon successful completion of the module, students understand the principles of interfacial band engineering central to modern micro– and nanoelectronics. They are able to construct and analyze band diagrams across a wide range of material systems and interfaces, and relate band alignment to the operation of fundamental electronic building blocks. Students can apply these concepts to diverse thin–film and 2D semiconductor heterostructures, gaining insight into interface functionality and pathways for device optimization.
Inhalte
- A brief introduction to solid–state physics: Hall experiment and holes as carriers, Bloch’s theorem, Kronig-Penney model, k–space concept, E(k) relation, parabolic approximation, effective mass, doping in semiconductors.
- p-n junction as the simplest example of the band alignment and the rules on how to construct interfacial band diagrams
- metal-SC junction, Shottky contacts, Fermi level pinning, MIGs, mirror charges
- semiconductor-insulator interface, interfacial charge traps, interfacial dipoles, Coulomb drag
- A brief overview of the MOS capacitor from the perspective of the band diagrams, planar MOSFETs and modern non-planar MOS-FET geometries in Si-based electronics.
- Memory elements: Charge–trap memory, DRAM, SRAM, CCDs vs CMOS detectors
- Brief introduction to deep learning and the challenges for von Neuman-based architectures
- Beyond von Neuman architectures NPUs, MPUs, VMMPs, and the concept of neuromorphic electronics
- Neuromorphic elements: memory transistors, FeRAM, FeFETs, NPUs, MPUs, VMMPs
- 2D electron gas in electronics: III–V semiconductors, HEMTs, TDs, RTDs
- In brief IV-IV semiconductor interfaces and the prospects of solid-state quantum computing
- Magnetism in solid-state devices: MTJs and SST–MRAMs
- 2D materials–based electronics
Voraussetzungen
Verpflichtende Voraussetzungen
Keine
Empfohlene Voraussetzungen
Sound knowledge of solid-state physics, enthusiasm for microelectronics
Prüfungsmodalitäten
- Oral exam, 45 min or
- Presentation on given topic that goes beyond the course, 15 min + 30 min questions
Termine im WiSe 26/27
Angeboten in
- Micro- and NanoelectronicsM.Sc.
Wahlpflichtkomplex: Technology and Devices
- PhysicsM.Sc.
Wahlpflichtkomplex: Physical Specialization with Experimental Focus
Themengebiet: Nanophysics
| Studiengang | Abschluss | Wahlpflichtkomplex |
|---|---|---|
| Micro- and Nanoelectronics | M.Sc. | Technology and Devices |
| Physics | M.Sc. | Physical Specialization with Experimental FocusThemengebiet: Nanophysics |
Literatur und Materialien
- Lecture notes provided prior to the lectures
- list of the literature (selected works):
- Yu & Cardona — Fundamentals of Semiconductors
- Sze & Ng — Physics of Semiconductor Devices
- Waser — Nanoelectronics and Information Technology
Bewertungen von Studierenden
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